Conference Program

Final Program

Thursday April 4th, U4-08, University of Milano-Bicocca

• • •   09:00 Welcome

    •   09:15 Introduction - Emilio Scalise/Leo Miglio (Unimib)

Session A.1 (Chairperson: E.Scalise)

• • •   09:30 INVITED - Erik Bakkers (TU/e)

Recent progress in hex-SiGe growth and optical properties

• • •   10:05 Wouter Peeters

Quantum wells with a direct bandgap in hexagonal Silicon Germanium

• • •   10:25 Marvin van Tilburg

Stimulated Emission Spectrum Observed from hex-SiGe Nanowires

• • •   10:45 Iuliia Dudko

Telecom band light emission from confined hexagonal Ge grown on self-assisted GaAs NWs by MBE

11.05 Coffee break

Session A.2 (Chairperson: E. Bakkers)

• 11:20 INVITED - Christopher Broderick (Tyndall-UCC)

    Engineering direct-gap optical emission in hexagonal Ge

• 11:55 Matte Schouten 

Observation of carrier cooling in direct band gap hex-SiGe

• 12:15 Baksa Kolok

Spin and charge relaxation in hexagonal germanium nanowire quantum dots due to phonons

• 12:35 Frank Glas

Why is it so difficult to grow hexagonal diamond nanowires of group IV semiconductors?

12.50-14.00 Lunch 

Session A.3 (Chairperson: S. Pandolfi)

• 14:00 INVITED - Verena Maier-Kiener (Unileoben)

From cryogenic to high temperature conditions – 

the wide range of advanced nanoindentation to study semiconductor materials

• 14:35 Gerald Schaffar

Maximizing the Output of Metastable Crystalline Phases During Nanoindentation of Silicon and Germanium

• 14:55 Emilio Scalise/Antonio Mio

Results and challenges in obtaining the hexagonal diamond Si phase by nanoindentation

15.15  Coffee break

Session A.4 (Chairperson: V. Maier)

• 15.30 INVITED - Silvia Pandolfi (Sorbonne Université) 

High pressure synthesis of nanostructured 4H hexagonal silicon polytype

• 16:05  Theo van den Berg 

2H Transformation in Nanofins and Determination of the Habit Plane

• 16:25 Fabrizio Rovaris

Atomistic Mechanisms of dc-hd Phase Transition in Si Nanoindentation

16.45 Poster Session & Refreshment 

19:30 Dinner

Friday April 5th, U4-08, University of Milano-Bicocca

Session B.1 (Chairperson: C. Broderick)

• •   9:00 INVITED - Laetitia Vincent (C2N - Paris Saclay)

      Synthesis and structural defects of hexagonal SiGe: towards the epitaxy

• •   09:35 Pim van den Berg

Towards optically addressable CMOS compatible spin qubits

• •   09:55 Nicolas Forrer

Germanium/Silicon Core Shell Nanowires for Spin/Hole Qubits Fabricated by Chemical Vapour Deposition

• •   10:15 Isabelle Bollier

Electrical Characterization of Hexagonal Silicon Germanium Nanowire

• •   10:35 Hassan Melhem

Growth of planar wurzite ZnS as a template for Hex-SiGe

10:55 Coffee break

Session B.2 (Chairperson: L. Vincent)

• 11:10  INVITED - Dan Buca (Jülich)

Opportunities and challenges in Group IV

• 11:45 Andrea Fantasia  

      A data-driven interatomic potential for exploring kinetics of phase transitions in Germanium

• 12:05 Arianna Nigro

Growth and characterization of Ge/SiGe planar heterostructures for spin qubit applications

• 12:25 Daniel Chrastina 

    Planar germanium quantum wells for hybrid semiconducting-superconducting quantum circuit

12:45-13:45 Lunch 

Session B.3 (Chairperson: D. Buca)

• 13:45 INVITED - Silvana Botti (RUB)

     Tuning Electronic Properties of Hexagonal SiGe Quantum Wells

• 14:20 Yetkin Pulcu 

Multiband k · p theory for hexagonal germanium

• 14:40 Marc Tunica

Ab initio modeling of n-type and p-type doping in hexagonal-diamond silicon

15:00 Closing remarks & discussions

Poster Session 

D. Lamon, M. M. Jansen, M. A. Verheijen, E.P.A.M. Bakkers

Growth of hexagonal SiGe nano-branches

M.M. Jansen, W.H.J. Peeters, M.A. Verheijen, E.P.A.M. Bakkers

High aspect ratio wurtzite GaAs nanowires as a platform for hexagonal SiGe

S. Meder, B. Haubmann, F. del Giudice, P. Schmiedeke, J. Zöllner, G. Koblmüller, J. J. Finley

Infrared InAs nanowire lasers as a model system to compare with hexagonal-SiGe gain media

X. Wang, J. Zöllner, D. Liu, S. Meder, W. Peeters, E.P.A.M. Bakkers, J. Haverkort, J. J. Finley

            Purcell-enhanced quantum emission using hex-SiGe NW-induced photonic crystal cavity

    D. Liu, X. Wang,  J. Zöllner, S. Meder, W. Peeters, E.P.A.M. Bakkers, Jos Haverkort, J. J. Finley

       Towards Hanle effect measurements of electron and hole g-factors in hexagonal SiGe nanostructures

      J. Zöllner, S. Meder, W. Peeters, E.P.A.M. Bakkers, G. Koblmüller, J. J. Finley 

       Simulation and Fabrication of a Hex-SiGe NW-induced Photonic Crystal Cavity in Silicon

      H.A.J. van der Donk, D. Lamon, M.M. Jansen, M.A. Verheijen, J.E.M. Haverkort, E.P.A.M. Bakkers

       Growth of branched wurtzite GaAs nanowire for Hybrid III-V/IV heterostructures

      C. Wakelkamp, R. Farina, W.H.J. Peeters, E.P.A.M. Bakkers, J.E.M. Haverkort

       Carrier Dynamics in Hex-SiGe Quantum Wells      

      P. Hemme, M. Verseils, J.B. Brubach, P. Roy, C. Renard, L. Vincent

       Toward the formation of 2H Germanium by HPHT conditions with in-situ FIR probe

      H. Ameziane, H. Melhem, G. Patriarche, T. Van den Berg, G. Hallais, C. Renard, L. Travers, L. Vincent

       Growing SiGe nanowires with the hexagonal phase

      R. Farina, M.A.J. van Tilburg, V.T. van Lange, W.H.J. Peeters, S. Meder, M.M. Jansen, J.E.M. Haverkort, E.P.A.M. Bakkers

       Characterizing Optical Cavities in hex-SiGe Nanowires

      V.T. v. Lange, A. Dijkstra, E.M.T. Fadaly, W.H.J. Peeters, M.A.J. v. Tilburg, E.P.A.M. Bakkers, J.E.M. Haverkort

       Lifetime and Optical Matrix Element of Hexagonal Ge

      R. Koolen, M.A. Verheijen, E.P.A.M. Bakkers

       Virtual substrates for planar hex-Ge

     G. Vanacore

     Ultrafast Transmission Electron Microscopy (UTEM): a new tool for dynamic investigation of matter at combined fs-nm resolutions

     E. Scalise

     2D Hexagonal inclusions in Silicon and Germanium

     D. Lanzoni

           Accelerating simulations of strained Ge surfaces evolution via Machine Learning